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this is information on a product in full production. may 2013 docid024026 rev 4 1/14 14 STF24N60M2, stfi24n60m2 n-channel 600 v, 0.168 typ., 18 a mdmesh ii plus? low q g power mosfet in to-220fp and i 2 pakfp packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications ? llc converters, resonant converters description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. d(2) g(1) s(3) am01476v1 to-220fp i 2 pakfp 1 2 3 1 2 3 (to-281) order codes v ds @ t jmax r ds(on) max i d STF24N60M2 650 v 0.19 18 a stfi24n60m2 table 1. device summary order codes marking package packaging STF24N60M2 24n60m2 to-220fp tube stfi24n60m2 i 2 pakfp (to-281) www.st.com
contents STF24N60M2, stfi24n60m2 2/14 docid024026 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid024026 rev 4 3/14 STF24N60M2, stfi24n60m2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 18 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 12 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 72 (1) a p tot total dissipation at t c = 25 c 30 w dv/dt (3) 3. i sd 18 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 4.17 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 3.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 180 mj
electrical characteristics STF24N60M2, stfi24n60m2 4/14 docid024026 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0, v ds = 600 v 1 a v gs = 0, v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 9 a 0.168 0.19 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1060 - pf c oss output capacitance - 55 -pf c rss reverse transfer capacitance - 2.2 -pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 258 - pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 7 - q g total gate charge v dd = 480 v, i d = 18 a, v gs = 10 v (see figure 14 ) -29-nc q gs gate-source charge - 6 - nc q gd gate-drain charge - 12 - nc
docid024026 rev 4 5/14 STF24N60M2, stfi24n60m2 electrical characteristics table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 9 a, r g = 4.7 , v gs = 10 v (see figure 14 and 19 ) -14-ns t r rise time - 9 - ns t d(off) turn-off delay time - 60 - ns t f fall time - 15 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) 1. the value is rated according to r thj-case and limited by package. source-drain current - 18 a i sdm (1),(2) 2. pulse width limited by safe operating area source-drain current (pulsed) - 72 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s v dd = 60 v (see figure 16 ) -332 ns q rr reverse recovery charge - 4 c i rrm reverse recovery current - 24 a t rr reverse recovery time i sd = 18 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 16 ) -450 ns q rr reverse recovery charge - 5.5 c i rrm reverse recovery current - 25 a
electrical characteristics STF24N60M2, stfi24n60m2 6/14 docid024026 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and i 2 pakfp figure 3. thermal impedance for to-220fp and i 2 pakfp figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15462v1 i d 30 20 10 0 0 10 v ds (v) (a) 5 15 40 v gs = 4 v v gs = 5 v v gs = 7 v v gs = 8, 9, 10 v 5 15 25 35 v gs = 6 v 20 am15470v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 10 20 v ds = 17 v 25 30 35 40 am15469v1 v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =480 v i d =18 a 25 300 200 100 0 400 500 v ds (v) v ds 12 30 600 am15471v1 r ds(on) 0.172 0.168 0.164 0.160 0 8 i d (a) ( ) 4 12 0.176 v gs =10v 16 am15465v1
docid024026 rev 4 7/14 STF24N60M2, stfi24n60m2 electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am15467v1 e oss 2 1 0 0 100 v ds (v) (j) 400 3 200 300 4 5 500 600 6 7 8 am15472v1 v gs(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) (norm) -25 1.0 75 25 50 100 i d = 250 a 1.1 am15473v1 r ds(on) 1.7 1.3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d = 9 a 2.3 v gs = 10 v am15464v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0.8 1 1.2 t j =-50c t j =150c t j =25c 12 14 16 1.4 am15468v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.05 1.07 1.03 i d = 1ma 1.09 1.11 am15466v1
test circuits STF24N60M2, stfi24n60m2 8/14 docid024026 rev 4 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024026 rev 4 9/14 STF24N60M2, stfi24n60m2 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STF24N60M2, stfi24n60m2 10/14 docid024026 rev 4 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024026 rev 4 11/14 STF24N60M2, stfi24n60m2 package mechanical data figure 20. to-220fp drawing 7012510_rev_k_b
package mechanical data STF24N60M2, stfi24n60m2 12/14 docid024026 rev 4 figure 21. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
docid024026 rev 4 13/14 STF24N60M2, stfi24n60m2 revision history 5 revision history table 11. document revision history date revision changes 10-dec-2012 1 first release. 20-dec-2012 2 added mosfet dv/dt ruggedness in table 2: absolute maximum ratings . 14-jan-2013 3 modified: figure 14 , 15 28-may-2013 4 ? modified: figure 14 , 15 , 16 and 17 ? minor text changes
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